Invited; Material challenges in HfO2-based ferroelectric memory devices
Conference Dates
May 15-18, 2023
Abstract
Ferroelectric memory devices have been considered one promising candidate for the next generation semiconductor devices for both conventional and future computing paradigm.[1-5] Especially, the discovery of ferroelectricity in fluorite-structured ferroelectrics such as HfO2 and ZrO2 disruptively accelerated the physical scaling down and performance improvement of the ferroelectric memory devices. The new functionality induced in the conventional gate insulator of the metal-oxide-semiconductor field-effect-transistor by adding a small amount of dopants with a subsequent crystallization annealing is highly attractive to both academia and industry.
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Recommended Citation
Min Hyuk Park, "Invited; Material challenges in HfO2-based ferroelectric memory devices" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)", Y. Kuo, Texas A&M University, USA Eds, ECI Symposium Series, (2022). https://dc.engconfintl.org/ulsic_vs_tft_8/45